This resulted in a very reduced function function as well as development of the Schottky contact concerning the BrGO and n-type Si substrate. Due to the upper proportion of B-C and B-C3 bonding from the BrGO/Si device than that during the rGO/Si, the lessened Schottky barrier peak of the BrGO/n-Si https://www.directivepublications.org/journal-of-applied-nanoscience/